AT410

Small Footprint Desktop System
Semiconductor-grade metal sealed lines and high temperature compatible fast pulsing ALD valves.
Ultrafast MFC for integrated inert gas purge.
4″ circular chuck customizable for smaller sizes or other shapes (11 mm tall).
3 organometallic precursors and 2 (up to 3) counter reactants.
Heated lines throughout (from precursor to chamber).
All aluminum (semiconductor grade) chamber ‒ range up to 300°C
7″ touchscreen PLC controller (no PC required)

Small Footprint Desktop System (< 0.15m3 | 2.5 sq ft)
High temperature compatible fast pulsing ALD valves with ultrafast MFC for integrated inert gas purge.
4″ circular chuck customizable for smaller sizes or other shapes (11 mm tall).
3 organometallic precursors and 2 (up to 3) counter reactants.
Heated lines throughout (from precursor to chamber).
High exposure (for trenches and porous substrates) and static processing mode
All aluminum (semiconductor grade) chamber ‒ range up to 310°C
7″ touchscreen PLC controller (no PC required)
Lifetime software upgrades included
1 year warranty (parts included)

Chamber temperatures from RT to 310°C ± 1 °C; Precursor temperatures from RT to 150°C ± 2°C (w/ heating jacket)
Smallest footprint on market (2.5 sq ft), bench top installation and cleanroom compatible
Simple system maintenance and lowest utilities and precursor usage on the market
Streamlined chamber design and small chamber volume
Fast cycling capability (up to 1.2nm/min Al₂O₃) and high exposure, deep penetration processing available
Full HW and SW interlocks for safe operation even in multi-user environment

Customized chuck/platen (square, indents for smaller pieces, powders)
Customized chamber (thicker substrates)
ATOzone – Ozone generator (required for some films: Pt, Ir, SiO₂, MoO₂, high quality Al₂O₃ below 60°C, high quality HfO₂)
- Optional – Ozone Safety Monitor w real time detection of ambient ozone gas
QCM (Quartz Crystal Microbalance)
Glovebox integration (typically required to not expose substrate to moisture; Sulfides, etc..)
External control – PC/software link (allows programing and running, remotely)
Ventable Precursor cabinet
Spare Chamber
IGPA (inert gas pressure assist)for low vapor pressure precursors
Higher temperature chuck (to 400°C or more)
Higher temperatures on precursors (to 200°C)
Third counter reactant
- Software control of third counter reactant

For detailed instructions see our presentation and video instructions: “AT410/610 Installation and Start-up“

N₂ purge gas should be >99.9995% with a shutoff valve (regulated to 10 – 30 psi, metal sealed), .
- Input line is 1/4 female VCR compression fitting
- Attach > 99.9995% nitrogen (UHP) purge gas via 1/4″ metal line to the 1/4″ compression fitting on back
Attach 90-110 psi CDA (clean dry air) via 1/4″ polyethylene tubing or metal line to the other 1/4″ compression fitting marked CDA (Clean Dry Air)
Min 12cfm wet pump (**PTFE vacuum fluid (like Fomblin) required) (610 and 810 use larger pumps typically 19.5 cfm or higher)
- NW25 (KF25) (1″) connection and also exhaust line (with > 5cfm draw)
- Greater than 1 meter should use NW40 (1.5″) exhaust line
Precursor’s attach via female VCR elbows (always use new gaskets).
- - Elbow: 1/4″ gasket first (with gloves on)
For precursor attachment please refer to AT410/AT610 Tool and Software Operation.

For detailed instructions see our presentation and video instructions: “AT410_610 Installation and Start-up“

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