At Anric Technologies, we specialize in compact, high-performance ALD equipment tailored for both academic and industrial applications. Whether you’re prototyping on the bench or scaling for pilot production, our tools offer a reliable entry into the world of ALD. Our systems are designed with flexibility in mind—supporting thermal and plasma ALD processes, batch processing, and glovebox integration. We understand that every research environment is unique, and that’s why we offer customizable solutions to meet your specific deposition challenges. Each tool comes with a full 3 years of process development support.
Atomic Layer Deposition (ALD) has become essential for applications ranging from semiconductor research to energy devices, optical coatings, biomedical protective coatings, and emerging nanotechnologies. Our desktop ALD systems help bridge the gap between research and real-world implementation, offering user-friendly operation, precise process control, and a process that is scalable to manufacturing.
Compact and Versatile
The AT200M is the smallest footprint ALD tool, ideal for installing in a glovebox or attaching to the side. Despite its compact size, it offers robust performance with semiconductor-grade components, making it suitable for research environments where space is limited. Options such as particle coating, high temperatures (up to 500 C), or plasma are available.
Cost-Effective Thermal ALD
Designed for 4-inch substrates, the AT410 provides an affordable solution for thermal ALD applications. Its customizable chucks and chambers accommodate various sample types, including 3D parts, optics, electronic packaging or square substrates making it versatile for different research needs.
Desktop Plasma ALD System
The AT650/850P is a compact desktop plasma ALD system that delivers high-quality films with deep penetration. The system can process smaller wafers up to 8 inches for the AT 850P. It features a hollow cathode plasma source and a 60 MHz RF generator, providing high electron density and low plasma damage, suitable for applications requiring precise film characteristics.
Thermal ALD with Upgrade Path to Plasma
The AT650/850T offers thermal ALD capabilities with the option to upgrade to plasma ALD. The system can process smaller wafers up to 8 inches for the AT 850T.This flexibility allows users to start with thermal processes and transition to plasma-enhanced deposition as their research or production needs evolve
Anric Technologies’ ATOzone (Ozone Generator) system utilizes high quality components that deliver high concentration (up to 12%) ozone in a very small form.
Enhanced Performance for 6-Inch Substrates
The AT610 is optimized for 6-inch substrates or up to 210 x 210 mm square, offering improved thermal performance and enhanced precursor delivery systems. This system is ideal for applications requiring precise film deposition on larger wafers. Ask about our large batch system with up to 9 125 x 125mm substrates, double-sided deposition.
Compare ALD equipment and systems manufactured by Anric Technologies. Compare by size and capability.
| AT200M | AT410/610 | AT6/850T | AT6/850P |
|---|---|---|---|
 |  |  |  |
| Desktop (W: ~11” (27.9cm) x D: 15” (38.1cm) x H: 14.5” (36.8cm)) | Desktop (W: 24.5” (62.3cm) x D: 24” (61cm) x H: 15.75” (40.5cm))[610 D: 25″ (63.5cm)] | Desktop (W: 15” (38.1cm) x D: 15” (38.1cm) x H: Less that 38” (96.5cm)) | Desktop (W: 15” (38.1cm) x D: 15” (38.1cm) x H: 38” (96.5cm)) |
| Sample Size = 2 inch (x4) up to 2 x 2 x 3” volume | 410 = 4 inch; 610 = 6 inch | 6/8 inch | 6/8 inch |
| Thermal to 300°C (optional to 500 °C) | Thermal to 320 °C (optional to 450 °C) | Thermal to 400 °C /600 °C Optional (field upgradeable to Plasma) | Plasma and Thermal to 400°C (600 °C Optional) |
| One Precursor/One Counter Reactant Option1: Two Precursors and Two Counter-Reactants Option 2:Three Precursors and One Counter-Reactant Option 3: Three Precursors and Two Counter-Reactants Option 4: Three Precursors and Three Counter-Reactants | Three Precursors/ Up to Three Counter Reactants Option1: Three Precursors and Three Counter-Reactants | Four Precursors/ Four Counter Reactants Option1:Five Precursors / Four | Four Precursors/ Four Counter Reactants Option1:Five Precursors / Four |
| Heated Precursor to 175 °C (N2 Assist Available) | Heated Precursor to 175°C (N2 Assist Available) | 4 (5 optional) Precursors to 185°C (with optional pressure boost) | 4 (5 optional) Precursors to 185°C (with optional pressure boost) |
| All stainless steel chamber and metal sealed stainless lines | All aluminum chamber (hot walled) and metal sealed stainless lines | All aluminum chamber (warm walled) and metal sealed stainless lines and chuck | All aluminum chamber (warm walled) and metal sealed stainless lines and chuck |
| Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves | Heated lines and fast pulsing ALD valves |
| Ultrafast MFC | Ultrafast MFC | Up to four ultrafast MFCs | Up to four ultrafast MFCs |
| 5” Display w. Integrated PLC | 7“ Display with integrated PLC | 10“ Display with integrated PLC | 10“ Display with integrated PLC |
With a commitment to quality, innovation, and customer support, Anric Technologies is trusted by leading labs and institutions worldwide. Every system we manufacture features:
Whether you need a glovebox-compatible 2″ tool or a full 12″ system for batch runs, we offer equipment that evolves with your research needs. Our experts are always ready to help you identify the right configuration, offer installation support, and ensure optimal performance from day one.
Explore our comparison chart or get in touch to discuss your deposition goals.
Our team is here to help you find the right Atomic Layer Deposition system. Contact us today to start a conversation. If you don’t think we have the ALD equipment you need, you will be surprised!
