Watch The Process
To get a more complete picture of the simple and direct interface for operating the benchtop AT-400 ALD system, please follow the prompts for the simulation. The simulation will step you through a series of operations the tool operator would use to start a basic ALD recipe and then it will plunge into the a molecular simulation of the growth of a layer of ZnO from the precursors diethylzinc and water. This is a great window into the basics of an ALD process but also a fun interactive tool for those with experience with this growth technique.
To Create The Vacuum
Hit 'Custom Recipe'
To Execute Recipe Process
Select '100 Cycles'
Under Total A/B Cycles
Run Custom 1
Load Material Onto Tray
Close the Tray...
Diethylzinc is dosed into the chamber
Diethylzinc molecules react with surface hydroxyl groups
Purge the chamber
Excess precursor and byproducts are purged from the chamber
Introduce H2O into the chamber
Water vapor is dosed into deposition chamber
Purge the chamber
Excess H20 and byproducts are purged from the chamber
ALD & Zinc Oxide Process
The AT-400 provided an intuitive and value rich route to the growth of a wide variety of films via Atomic Layer Deposition. The simulation provided a schematic of growing a simple ZnO layer on a silicon wafer, but there is much more that can be accomplished on this thermal ALD tool. The software allows for multi-component materials, nano-laminate stacks, essentially full control over all aspects of the process recipe. With a wide range of deposition temperatures (RT-350C) it is possible to grow practically every thermal ALD film that has been reported in the literature. Look for the materials resource hub and the tool specifications for more information.Back To ALD